Al/sub 0.10/Ga/sub 0.90/As-GaAs microcoolers
Al/sub 0.10/Ga/sub 0.90/As-GaAs microcoolers
复制标题
Al/sub 0.10/Ga/sub 0.90/As-GaAs 微冷却器
DOI：
10.1109/led.2004.828568
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发表时间：
2004
影响因子：
4.9
通讯作者：
Kei May Lau
中科院分区：
文献类型：
--
作者：
Jizhi Zhang;N. Anderson;Kei May Lau
GaAs基微制冷器的制作和测试。在GaAs上生长的Al/sub 0.10/Ga/sub 0.90/As层具有较低的热导率和与衬底相当的电导率，用于微冷却器结构中以减少从散热器返回的热传导。在环境温度为25 /spl deg/C和100 /spl deg/C时，分别从60 /spl × 60 /spl μ/m微冷却器获得0.87 /spl deg/C和2.3 /spl deg/C的最大冷却温度。
GaAs-based microcoolers were fabricated and tested. An Al/sub 0.10/Ga/sub 0.90/As layer grown on GaAs, having a lower thermal conductivity and comparable electrical conductivity to that of the substrate, was employed in the microcooler structure to reduce the heat conduction back from the heat sink. Maximum cooling temperatures of 0.87 /spl deg/C and 2.3 /spl deg/C were obtained at ambient temperatures of 25 /spl deg/C and 100 /spl deg/C, respectively, from 60 /spl times/ 60 /spl mu/m microcoolers.