Terahertz Radiation from (111) InAs Surface Using 1.55 µm Femtosecond Laser Pulses
Terahertz Radiation from (111) InAs Surface Using 1.55 µm Femtosecond Laser Pulses
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使用 1.55 µm 飞秒激光脉冲从 (111) InAs 表面发出太赫兹辐射
DOI：
10.1143/jjap.38.l1035
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发表时间：
1999
影响因子：
1.5
通讯作者：
M. Hangyo
中科院分区：
文献类型：
--
作者：
Kondo Takashi;M. Sakamoto;M. Tonouchi;M. Hangyo
我们报道了在1.55 μm飞秒激光脉冲激发下，首次观测到来自未掺杂（111）InAs表面的太赫兹（THz）辐射。由相对于表面法线以45度的入射角测量的未聚焦光束照射的表面发射太赫兹辐射，其振幅对方位角的依赖性较弱。结果表明，在功率密度小于1 W/cm ~ 2时，非聚焦光束激发的辐射主要由浪涌电流效应引起，并伴有少量的光整流效应。
We report the first observation of terahertz (THz) radiation from an undoped (111) InAs surface excited by 1.55 µm femtosecond laser pulses. The surface illuminated by an unfocused beam at an incidence angle of 45 degrees measured with respect to the surface normal emits THz radiation with weak dependence of the amplitude on the azimuthal angle. The results indicate that the radiation excited by the unfocused beam at a power density less than ~1 W/cm2 is mainly explained by the surge current effect accompanied by a small component associated with the optical rectification effect.