Transferred-electron oscillations in In0.53Ga0.47As
Transferred-electron oscillations in In0.53Ga0.47As
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DOI：
10.1049/el:19820567
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发表时间：
1982-09
影响因子：
1.1
通讯作者：
Y. Zhao;C. Wei;H. Beneking
中科院分区：
文献类型：
--
作者：
Y. Zhao;C. Wei;H. Beneking
在In_（0.53）Ga_（0.47）As平面器件中观察到了转移电子振荡现象。相对于阈值场的器件电流的振荡的峰-峰幅度高达70%，表明该材料的峰-谷速度比为3.3：1。根据振荡频率（2 GHz）和相应的器件长度（40 µm）估计的畴速度为8×106 cm-1。本文的研究结果表明，该三元合金具有良好的TED应用前景。
Transferred-electron oscillations were observed and investigated in planar devices of In0.53Ga0.47As. The peak-to-peak magnitude of oscillations with respect to the device current at threshold field was as high as 70%, indicating the peak-to-valley velocity ratio of 3.3:1 for this material. The domain velocity was estimated from the oscillation frequency (2 GHz) and the corresponding device length (40 µm) to be 8×106 cms¯1. The results presented in the letter show a promising prospect for TED applications of this ternary alloy.