Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs
Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs
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DOI：
10.1109/irps.2016.7574529
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发表时间：
2016-04
期刊：
影响因子：
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通讯作者：
I. Chatterjee;M. Uren;A. Pooth;S. Karboyan;S. Martin-Horcajo;Martin Kuball;K. B. Lee;Z. Zaidi;P. Houston;D. Wallis;I. Guiney;C. Humphreys
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文献类型：
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作者：
I. Chatterjee;M. Uren;A. Pooth;S. Karboyan;S. Martin-Horcajo;Martin Kuball;K. B. Lee;Z. Zaidi;P. Houston;D. Wallis;I. Guiney;C. Humphreys
本文研究了AlGaN/GaN-on-Si高电子迁移率晶体管（HEMT）中C掺杂GaN缓冲层的电荷俘获和输运。背栅和动态罗恩实验表明，高的垂直漏电流的结果在缓冲器中的显着的长期负电荷捕获，导致电流崩溃在标准设备操作条件下。控制电流崩塌不仅需要控制层结构及其掺杂，还需要控制每层中泄漏的精确平衡。
Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.