Dielectric enhancement of excitons in near-surface quantum wells.
Dielectric enhancement of excitons in near-surface quantum wells.
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近表面量子阱中激子的介电增强。
DOI：
10.1103/physrevb.54.r2335
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Tikhodeev
中科院分区：
文献类型：
--
作者：
Kulik;Kulakovskii;Bayer;Forchel;Gippius;Tikhodeev
用光致发光激发和磁光致发光光谱研究了近表面In x Ga 1− x As/GaAs量子阱中的激子.通过测量2s和1 s激子的分裂以及1 s激子态的抗磁位移来证明激子的介电增强。与理论计算一致的激子结合能被发现是增强的1.5倍的介电限制为5 nm宽的量子威尔斯与帽层厚度低于3 nm。
The excitons in near-surface In x Ga 1− x As/GaAs QW's have been investigated by photoluminescence excitation and magnetophotoluminescence spectroscopy. The dielectric enhancement of excitons is demonstrated by measuring the splitting of the 2 s and 1 s excitons and the diamagnetic shift of the 1 s exciton state. In agreement with theoretical calculations the exciton binding energy is found to be enhanced 1.5 times by the dielectric confinement for 5-nm-wide quantum wells with cap layer thicknesses below 3 nm.