Hyperfine-Interaction-Driven Suppression of Quantum Tunneling at Zero Field in a Holmium(III) Single-Ion Magnet
Hyperfine-Interaction-Driven Suppression of Quantum Tunneling at Zero Field in a Holmium(III) Single-Ion Magnet
复制标题
钬(III)单离子磁体中零场量子隧道的超精细交互驱动抑制
DOI：
10.1002/anie.201701480
复制
发表时间：
2017-04-24
影响因子：
16.6
通讯作者：
Tong, Ming-Liang
中科院分区：
文献类型：
--
作者：
Chen, Yan-Cong;Liu, Jun-Liang;Tong, Ming-Liang
据报道，一种极为罕见的非kramers钬（III）单离子磁体（SIM）被具有237(4)cm（-1）高能量势垒的氧化膦稳定在五边形-双金字塔几何结构中。除了单晶磁滞回线外，电场相关的交流磁化率也可以抑制零场下的量子隧穿和场致量子隧穿产生的超精细结构。这些戏剧性的动态变化归因于良好的晶体场环境和Ho-165 （I = 7/2）产生的超精细相互作用，其自然丰度为100%。
An extremely rare non-Kramers holmium(III) single-ion magnet (SIM) is reported to be stabilized in the pentagonal-bipyramidal geometry by a phosphine oxide with a high energy barrier of 237(4) cm(-1). The suppression of the quantum tunneling of magnetization (QTM) at zero field and the hyperfine structures originating from field-induced QTMs can be observed even from the field-dependent alternating-current magnetic susceptibility in addition to single-crystal hysteresis loops. These dramatic dynamics were attributed to the combination of the favorable crystal-field environment and the hyperfine interactions arising from Ho-165 (I = 7/2) with a natural abundance of 100%.