Defect induced p-type conductivity in zinc oxide at high temperature: electron paramagnetic resonance spectroscopy.
Defect induced p-type conductivity in zinc oxide at high temperature: electron paramagnetic resonance spectroscopy.
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DOI：
10.1039/c7nr03988c
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发表时间：
2017-08
期刊：
影响因子：
6.7
通讯作者：
E. Erdem
中科院分区：
文献类型：
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作者：
E. Erdem
采用高温电子顺磁共振（EPR）测量方法对固体共沉淀法合成的ZnO纳米晶（50 nm）样品进行了研究，以了解其本征缺陷中心在高温下的行为。研究发现，表面缺陷中心对ZnO的导电性能起着至关重要的作用。在300°C以上，ZnO纳米晶体的EPR光谱中只能看到表面缺陷，表明p型电导率。
High-temperature electron paramagnetic resonance (EPR) measurements were applied to a ZnO nanocrystalline (50 nm) sample, synthesized via a solid co-precipitation method, in order to understand the behavior of intrinsic defect centers at high temperatures. It has been observed that the defect centers on the surface play a crucial role in the conductivity behavior of ZnO. Above 300 °C only surface defects can be visible in EPR spectra for ZnO nanocrystals which indicate p-type conductivity.