Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering
Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering
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DOI：
10.1109/pvsc.2018.8548205
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
Xuemei Cheng;K. Gotoh;Takeya Mochizuki;N. Usami
中科院分区：
文献类型：
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作者：
Xuemei Cheng;K. Gotoh;Takeya Mochizuki;N. Usami
射频磁控溅射Nb掺杂的二氧化钛（TiO 2：Nb）薄膜无碱玻璃基板上显示，提供良好的透明度和低电阻率。薄膜的光学和电学性能与沉积参数以及退火工艺密切相关。研究了沉积功率（100-400 W）、沉积温度（25-200 °C）和O2/O2+Ar流量比（0-9.09%）对薄膜光电性能的影响。在600 °C退火60 min后，薄膜的电阻率从7× 10 - 3 Ω·cm降低到2×10-3 Ω·cm，可见光透过率超过70%。由于其高的功函数和良好的光电性能，TiO 2：Nb作为无掺杂硅太阳能电池或透明导电氧化物材料的电子选择性接触具有很大的潜力。
RF magnetron sputtered Nb doped titanium oxide (TiO2:Nb) thin film on alkali-free glass substrate is shown to provide good transparency and low resistivity. Both the optical and electrical properties are closely dependent on the deposition parameters as well as the post-annealing process. The impact of deposition power (100-400 W), deposition temperature (25-200 °C) and O2/O2+Ar flow rate ratio (0-9.09%) on the optical and electrical properties have been studied. A significant improvement of the conductivity of TiO2: Nb thin film is observed after annealing at 600 °C over 60min, leading to the decrease of resistivity from 7×103 Ω•cm to 2×10-3 Ω•cm and the transparency over 70% in the visible wavelength. Due to its high work function and the obtained good opto-electrical property, TiO2:Nb has a great potential as an electron selective contact for dopant-free Si solar cells or transparent conductive oxide material.