Thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductors: Toward High-Performance, Air-Stable Organic Thin-Film Transistors
Thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductors: Toward High-Performance, Air-Stable Organic Thin-Film Transistors
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DOI：
10.1021/ja205398u
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发表时间：
2011-08-31
影响因子：
15
通讯作者：
Marks, Tobin J.
中科院分区：
文献类型：
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作者：
Guo, Xugang;Ponce Ortiz, Rocio;Marks, Tobin J.
我们报道了一种基于噻吩并[3，4-c]吡咯-4，6-二酮（TPD）结构单元的新型p型半导体聚合物家族，其在薄膜晶体管（TFT）中具有良好的加工性以及良好的迁移率和寿命稳定性。TPD均聚物P1通过Yamamoto偶联合成，而共聚物P2-P8通过Stile偶联合成。所有这些聚合物的特征在于化学分析以及热分析，光谱，和循环伏安法。P2-P7具有比P3 HT低0.24-0.57 eV的HOMO，这取决于施主计数，并且在整个系列中具有类似的光学带隙（类似于1.80 eV）的可见光区域中表现出大的振子强度。P8中二烷氧基联噻吩计数的富电子特性极大地压缩了带隙，导致系列中最低的E-g（opt）（1.66 eV），但也将HOMO能量提高到-5.11 eV。有机薄膜晶体管（OTFT）的电学特性表明，器件性能对低聚噻吩共轭长度非常敏感，但也对增溶侧链取代基（长度、位置图案）非常敏感。利用XRD和AFM对薄膜的微观结构和形貌进行了表征，并与薄膜的性能进行了关联。通过策略性地改变寡聚噻吩供体共轭长度并优化增溶侧链，对于基于P4的器件实现了类似于0.6 cm（2）V-1 s（-1）的最大OTFT空穴迁移率。OTFT的环境（存储）和操作（偏置）在周围的稳定性进行了研究，并观察到增强的性能，由于低洼的HOMO。这些结果表明，TPD是一个很好的构建块用于构建高性能聚合物的p型晶体管应用，由于优异的加工性，大量的空穴迁移率，和良好的器件稳定性。
We report a new,p-type semiconducting polymer family based on the thieno[3,4-c]pyrrole-4,6-dione (TPD) building block, which exhibits good processability as well as good mobility and lifetime stability in thin-film transistors (TFTs). TPD homopolymer P1 was synthesized via Yamamoto coupling, whereas copolymers P2-P8 were synthesized via Stile coupling. All of these polymers were characterized by chemical analysis as well as thermal analysis, optical spectroscopy, and cyclic voltammetry. P2-P7 have lower-lying HOMOs than does P3HT by 0.24-0.57 eV, depending on the donor counits, and exhibit large oscillator strengths in the visible region with similar optical band gaps throughout the series (similar to 1.80 eV). The electron-rich character of the dialkoxybithiophene counits in P8 greatly compresses the band gap, resulting in the lowest E-g(opt) in the series (1.66 eV), but also raising the HOMO energy to -5.11 eV. Organic thin-film transistor (OTFT) electrical characterization indicates that device performance is very sensitive to the oligothiophene conjugation length, but also to the solubilizing side chain substituEnts (length, positional pattern). The corresponding thin-film microstructures and morphologies were investigated by XRD and AFM to correlate with the OTFT performance. By strategically varying the oligothiophene donor conjugation length and optimizing the solubilizing side chains, a maximum OTFT hole mobility of similar to 0.6 cm(2) V-1 s(-1) is achieved for P4-based devices. OTFT environmental (storage) and operational (bias) stability in ambient was investigated, and enhanced performance is observed due to the low-lying HOMOs. These results indicate that the TPD is an excellent building block for constructing high-performance polymers for p-type transistor applications due to the excellent processability, substantial hole mobility, and good device stability.