Growth and emission properties of β-SiC nanorods
Growth and emission properties of β-SiC nanorods
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DOI：
10.1016/s0921-5093(00)00654-7
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发表时间：
2000-06-30
期刊：
影响因子：
6.4
通讯作者：
Lee, ST
中科院分区：
文献类型：
--
作者：
Zhou, XT;Wang, N;Lee, ST
已经开发了一步程序，以使用热灯丝化学气相沉积在硅衬底上从固体碳和硅源生长β-碳化硅（β-SiC）纳米棒。生长过程由限制在固体源板中的金属颗粒的杂质催化，该固体源板由石墨和硅粉末的混合物在150摄氏度下压制而成。将氢气引入反应室中以与固体源反应。由此产生的过程中产生的，碳氢化合物和氢硅自由基，随后在Si衬底表面上反应，并推测形成SiC纳米棒。纳米棒由结晶β-SiC核和无定形氧化硅壳层组成。纳米棒的直径为10-30 nm，长度小于1 μ m。采用电流-电压测量和Fowler-Nordheim方程研究了β-SiC纳米棒的场发射特性。碳化硅纳米棒表现出高稳定性的高电子场发射。沿着制备的简便性，这些碳化硅纳米棒被认为在电子场发射器件中具有潜在的应用。(C)2000 Elsevier Science S.A. All rights reserved.
A one step procedure has been developed to grow beta-silicon carbide (beta-SiC) nanorods from a solid carbon and silicon source on silicon substrates using a hot filament chemical vapor deposition. The growth process was catalyzed by the impurities of metallic particles confined in the solid source plate made of a mixture of graphite and silicon powders pressed at 150 degrees C. Hydrogen was introduced into a reaction chamber to react with the solid source. The resulting process produced, hydrocarbon and hydrosilicon radicals, which subsequently reacted on the Si substrate surface and presumably formed SiC nanorods. The nanorods consisted of a crystalline beta-SiC core with an amorphous silicon oxide shell layer. The nanorods were 10-30 nm in diameter and less than 1 mu m in length. Field emission characteristics of the beta-SiC nanorods were investigated using current-voltage measurements and the Fowler-Nordheim equation. The silicon carbide nanorods exhibited high electron field emission with high stability. Along with the ease of preparation, these silicon carbide nanorods are believed to have potential application in electron field emitting devices. (C) 2000 Elsevier Science S.A. All rights reserved.