Silicon heterojunction solar cell with passivated hole selective MoOx contact
Silicon heterojunction solar cell with passivated hole selective MoOx contact
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DOI：
10.1063/1.4868880
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发表时间：
2014-03-17
影响因子：
4
通讯作者：
Javey, Ali
中科院分区：
文献类型：
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作者：
Battaglia, Corsin;de Nicolas, Silvia Martin;Javey, Ali
我们探索了亚化学计量比的三氧化钼(MoOx，x<；3)作为硅太阳能电池的无掺杂、空穴选择性接触。在氧化层和硅吸收层之间使用本征氢化非晶硅钝化层，实现了高开路电压711 mV和18.8%的功率转换效率。由于MoOx的带隙很宽，与传统的硅异质结电池的p型非晶硅发射极相比，我们在太阳光谱的紫外和可见光部分观察到了1.9 mA/cm(2)的可观的光电流增益。我们的结果强调了氧化物作为无机半导体的载流子选择异质结伙伴的强大潜力。(C)2014 AIP出版有限责任公司。
We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm(2) in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. (C) 2014 AIP Publishing LLC.