Progress in silicon-based quantum computing-猫眼课题宝

DOI：

10.1098/rsta.2003.1221

发表时间：

2003-07

期刊：

Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences

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通讯作者：

中科院分区：

其他

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作者：

R. G. Clark;R. Brenner;T. M. Buehler;V. Chan;N. Curson;A. Dzurak;E. Gauja;H. Goan;A. Greentree;T. Hallam;A. Hamilton;L. Hollenberg;D. N. Jamieson;J. McCallum;G. J. Milburn;J. O'Brien;L. Oberbeck;C. Pakes;S. Prawer;D. Reilly;F. Rueß;S. R. Schofield;M. Simmons;F. Stanley;R. Starrett;C. Wellard;C. Yang

我们回顾了澳大利亚量子计算机技术中心在基于磷施主原子嵌入本征硅中的自旋量子比特和电荷量子比特的制造和演示方面的进展。制造是通过两种互补的途径进行的：一种是“自上而下”的方法，用于短期生产几个量子比特的演示设备，另一种是“自下而上”的方法，用于生产具有亚纳米精度的大规模量子比特阵列。“自上而下”的方法采用低能（keV）离子束注入磷原子。在注入过程中的单原子控制是通过监测芯片上的检测器电极，集成在设备结构。相比之下，“自下而上”的方法使用扫描隧道显微镜光刻和外延硅过生长来构建原子尺度的器件。在这两种情况下，表面电极使用电压脉冲控制量子比特，而在量子极限附近工作的双单电子晶体管提供快速读出和杂散信号抑制。

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a ‘top–down’ approach for near–term production of few–qubit demonstration devices and a ‘bottom–up’ approach for large–scale qubit arrays with sub–nanometre precision. The ‘top–down’ approach employs a low–energy (keV) ion beam to implant the phosphorus atoms. Single–atom control during implantation is achieved by monitoring on–chip detector electrodes, integrated within the device structure. In contrast, the ‘bottom–up’ approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single–electron transistors operating near the quantum limit provide fast read–out with spurious–signal rejection.

Progress in silicon-based quantum computing

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