Fabrication of long lengths of YBCO coated conductors using a continuous reel-to-reel dip-coating unit

Fabrication of long lengths of YBCO coated conductors using a continuous reel-to-reel dip-coating unit
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使用连续卷到卷浸涂装置制造长长度的 YBCO 涂层导体

DOI:
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发表时间:
2001
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通讯作者:
D. Christen
D. Christen
中科院分区:
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文献类型:
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作者:
M. Paranthaman;T. Chirayil;S. Sathyamurthy;D. Beach;A. Goyal;F. List;Dominic F. Lee;X. Cui;S. W. Lu;B. Kang;E. Specht;Patrick M. Martin;D. Kroeger;R. Feenstra;C. Cantoni;D. Christen

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本文提出了一种低成本、非真空、溶液前驱体的方法,在双轴织构金属衬底上制备了Gd/sub 2/O/sub 3/和Eu/sub 2/O/sub 3/缓冲层以及YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta//(YBCO)超导体。在溶胶-凝胶法制备的Eu/sub 2/O/sub 3/籽晶层上溅射YSZ和CeO/sub 2/ top层,得到了J/sub c/> 1 MA/cm/sup 2/的YBCO薄膜。采用脉冲激光沉积法(PLD)在所有溶液缓冲层(CeO/sub 2//Eu/sub 2/O/sub 3//Ni)上生长了J/sub c/为200,000 A/cm/sup 2/的YBCO薄膜。在立方织构Ni-W(3at.%)上制备了长约100米的无裂纹Gd/sub 2/O/sub 3/缓冲层第一次用的是基板。采用三氟乙酸盐(TFA)前驱体法在轧制辅助双轴织构衬底(RABiTS)上制备了高质量的YBCO薄膜。将前体旋涂或浸涂并在新开发的快速3小时烧除步骤中分解,然后进行后退火。在一个固定的烧毁路线,我们已经产生了40厘米长的无裂纹的YBCO TFA的RABiTS前体。在短段上,在所有PLD缓冲Ni衬底(CeO/sub 2//YSZ/CeO/sub 2//Ni)上生长了77 K下J/sub c/超过500,000 A/cm/sup 2/的YBCO薄膜。
A low-cost, non-vacuum, solution precursor route has been developed to produce epitaxial Gd/sub 2/O/sub 3/ and Eu/sub 2/O/sub 3/ buffer layers and YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) superconductors on biaxially textured metal substrates. On sol-gel Eu/sub 2/O/sub 3/ seed layers with sputtered YSZ and CeO/sub 2/ top layers, a YBCO film with a J/sub c/ of over 1 MA/cm/sup 2/ at 77 K was obtained. On all solution buffer layers (CeO/sub 2//Eu/sub 2/O/sub 3//Ni), YBCO film with a J/sub c/ of 200,000 A/cm/sup 2/ at 77 K was grown using pulsed laser deposition (PLD). Meter lengths of epitaxial and crack-free Gd/sub 2/O/sub 3/ buffer layers were fabricated on cube textured Ni-W (3 at.%) substrates for the first time. High quality YBCO films were deposited on Rolling-Assisted Biaxially Textured Substrates (RABiTS) using a trifluoroacetate (TFA) precursor approach. The precursors were either spin-coated or dip-coated and decomposed in a newly developed fast 3-hour burn-out step followed by post-annealing. In a stationary burn-out route, we have produced 40 cm long crack-free YBCO TFA precursors on RABiTS. On short segments, YBCO films with a J/sub c/ of over 500,000 A/cm/sup 2/ at 77 K were grown on all PLD buffered-Ni substrates (CeO/sub 2//YSZ/CeO/sub 2//Ni).