Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
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DOI：
10.1109/jstqe.2020.2964381
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发表时间：
2020-01
影响因子：
4.9
通讯作者：
Y. Wan;C. Shang;J. Norman;Bei Shi;Qiang Li;N. Collins;M. Dumont;K. May;Lau;A. Gossard;J. Bowers
中科院分区：
文献类型：
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作者：
Y. Wan;C. Shang;J. Norman;Bei Shi;Qiang Li;N. Collins;M. Dumont;K. May;Lau;A. Gossard;J. Bowers
报道了直接生长在准标称Si（001）衬底上的电抽运连续InAs/GaAs量子点激光器，切角小至0.4°。不需要GaP、Ge缓冲层或衬底图案化。通过金属有机化学气相沉积（MOCVD）生长具有3 × 107 cm−2的低穿透位错密度的反相无边界外延GaAs膜。在室温下获得了波长为1.3 μm的连续激光输出，最小阈值电流密度为34.6A/cm ~ 2/层，最高工作温度为80 °C，最大单面输出功率为52 mW。提出了各种单片III-V族异质外延Si解决方案的比较。在未图案化的准标称（001）Si上的直接生长可以以最低的生命周期成本产生最好的材料质量。
We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm−2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.