SYNCHROTRON RADIATION X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF HYDROGEN-TERMINATED SI SURFACES AND THEIR OXIDATION MECHANISM
SYNCHROTRON RADIATION X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF HYDROGEN-TERMINATED SI SURFACES AND THEIR OXIDATION MECHANISM
复制标题
氢封端硅表面及其氧化机制的同步辐射X射线光电子能谱研究
DOI：
10.1116/1.587790
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发表时间：
1994
影响因子：
1.4
通讯作者：
M. Hasegawa
中科院分区：
文献类型：
--
作者：
Yamamoto Kenichi;M. Hasegawa
利用同步辐射X射线光电子能谱定量研究了Si（100）表面的H终止过程和氧化抑制效应。氢封端的Si（100）表面具有两种氢吸附组分（单氢化物和二氢化物）。本文报告了各相的氧化抑制作用。Si（100）表面（平坦的和倾斜10°的）的H终止通过向加热的钨丝供应通过暴露于H2气体而产生的H原子来进行。之后，在室温下将表面暴露于O2气体（1000 L）。Si 2 p谱中两个H吸附分量的大小变化及其峰位移表明氢在Si（100）表面上的吸附过程为两阶段。单氢化物相（2×1-H）的氧化减少到清洁Si（100）表面的1/3以下，而二氢化物相（1×1 - 2 H）的氧化减少到1/9以下。单氢相比二氢相更容易发生氧化。
The H‐termination process on a Si(100) surface and the oxidation‐inhibiting effects were investigated quantitatively by x‐ray photoelectron spectroscopy using synchrotron radiation. The H‐terminated Si(100) surface has two hydrogen‐adsorption components (monohydride and dihydride). This article reports on the oxidation‐inhibiting effects of each phase. The H termination of Si(100) surfaces (flat and tilted by 10°) was performed by supplying H atoms that were generated by the exposure of H2 gas to a heated tungsten filament. After that, the surface was exposed to O2 gas (1000 L) at room temperature. The magnitude change of two H‐adsorption components in the Si 2p spectra and their peak shifts show a two‐stage hydrogen adsorption process on the Si(100) surface. Oxidation of the monohydride phase (2×1‐H) is reduced to less than 1/3 of that of a clean Si(100) surface, while that of the dihydride phase (1×1‐2H) is reduced to below 1/9. Oxidation occurs more easily for the monohydride phase than for the dihydri...