Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect
Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect
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DOI：
10.7566/jpsj.84.104708
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发表时间：
2015-10-15
影响因子：
1.7
通讯作者：
Tokura, Yoshinori
中科院分区：
文献类型：
--
作者：
Yokouchi, Tomoyuki;Kanazawa, Naoya;Tokura, Yoshinori
我们通过测量平面霍尔效应研究了单晶块体和 MnSi 外延薄膜中斯格明子的形成。在大块样品中成熟的斯格明子相区域中观察到平面霍尔效应的显着阶梯场分布，这归因于相对于磁调制方向的各向异性磁阻效应。我们还在低温面内磁场下检测到薄膜中特征性的平面霍尔异常，这表明在薄膜平面内形成了斯格明子弦。单轴磁各向异性对于稳定 MnSi 薄膜中的面内斯格明子起着重要作用。
We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect the characteristic planar Hall anomalies in the thin films under the in-plane magnetic field at low temperatures, which indicates the formation of skyrmion strings lying in the film plane. Uniaxial magnetic anisotropy plays an important role in stabilizing the in-plane skyrmions in the MnSi thin film.