Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs
Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs
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DOI：
10.1109/ted.2005.850629
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发表时间：
2005-06
影响因子：
3.1
通讯作者：
A. Ortiz-Conde;F. García-Sánchez;S. Malobabic
中科院分区：
文献类型：
--
作者：
A. Ortiz-Conde;F. García-Sánchez;S. Malobabic
我们扩展我们以前的朗伯函数为基础的解析解的undoped-body单栅体MOSFET的表面电位，提供一个明确的解析解的undoped-body对称双栅器件的表面电位。所提出的解决方案相比，精确的结果产生的误差是合理的小典型的器件尺寸和偏置条件。
We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.