Influence of Phenyl Perfluorination on Charge Transport Properties of Distyryl-Oligothiophenes in Organic Field-Effect Transistors
Influence of Phenyl Perfluorination on Charge Transport Properties of Distyryl-Oligothiophenes in Organic Field-Effect Transistors
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DOI：
10.1021/jp8049262
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发表时间：
2009-01
影响因子：
3.7
通讯作者：
C. Videlot‐Ackermann;H. Brisset;Jian Zhang;J. Ackermann;S. Nénon;F. Fages;P. Marsal;Toshinori Tanisawa;N. Yoshimoto
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文献类型：
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作者：
C. Videlot‐Ackermann;H. Brisset;Jian Zhang;J. Ackermann;S. Nénon;F. Fages;P. Marsal;Toshinori Tanisawa;N. Yoshimoto
在这项研究中，介绍了两个含全氟芳烃的二苯基寡硫苯类似物(DFSnT，n=2，4)的溶液和固态性质，以及有机薄膜晶体管(OTFT)行为。高真空蒸发薄膜作为半导体层应用于有机薄膜晶体管(OTFT)中。这些结果旨在了解全氟化对二苯基寡硫苯骨架(DSNT)上芳烃部分的影响。令人惊讶的是，在空气和中等真空下对DFSnT薄膜进行的OTFT测量表明，这些化合物的行为像p型半导体。此外，基于DFS4T的OTFT在大气条件(空气、温度)下的空穴迁移率(μ)和阈值电压(Vt)的详细货架寿命测试显示了p型DFSnT化合物的空气操作性能。利用密度泛函理论(DFT)和自旋密度分布的理论研究可以更好地理解全氟化对电子结构的影响。
In this study, solution and solid-state properties, as well as the organic thin film transistor (OTFT) behavior, of two perfluoroarene-containing analogues of distyryl-oligothiophenes (DFSnT, n = 2, 4) are presented. High-vacuum evaporated thin films were implemented as semiconducting layers into organic thin film transistors (OTFTs). The results aim at understanding the influence of perfluorination on the arene moieties on the distyryl-oligothiophene skeleton (DSnT). Surprisingly, OTFT measurements performed in air and under moderate vacuum for DFSnT films show that these compounds behave as p-type semiconductors. Furthermore, detailed shelf-life tests of hole mobility (μ) and threshold voltage (Vt) under atmospheric conditions (air, temperature) of OTFTs based on DFS4T are shown to underscore the air-operating performance of p-type DFSnT compounds. A theoretical study using density functional theory (DFT) and spin density distribution provides a better understanding of the effects of perfluorination on ...