SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs
SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs
复制标题
Si MOSFET 中 Si-HfO2 界面处的 SO 声子散射率
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
G. Ferrari
中科院分区：
文献类型：
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作者：
J. Barker;J. Watling;G. Ferrari
具有高κ栅极堆叠的硅MOSFET提供了栅极漏电流的显著降低，但是软表面光学声子模式的存在降低了迁移率。基于动态屏蔽模型，提出了一套更为复杂的SO声子在Si-HfO 2界面散射的模型。通过简单的近似方法研究了电子-声子-等离子体激元耦合的朗道阻尼。一种新的方法来确定重新归一化的声子谱的基础上Pade近似的路线，以获得实际的散射率蒙特卡罗模拟概述。
Silicon MOSFETs with high κ gate stacks offer a significant reduction in gate leakage current, but the presence of soft surface optic phonon modes degrades the mobility. A progressively more complex set of models for SO phonon scattering at the Si-HfO2 interface is presented based upon dynamic screening models. Landau damping of the electron-phonon-plasmon coupling is examined by simple approximations. A novel approach to determining the re-normalised phonon spectrum based on Pade approximants is outlined as a route to obtaining practical scattering rate for Monte Carlo simulation.