Development of micron-sized Cu-Ag composite paste for oxidation-free bare Cu bonding in air condition and its deterioration mechanism during aging and power cycling tests
Development of micron-sized Cu-Ag composite paste for oxidation-free bare Cu bonding in air condition and its deterioration mechanism during aging and power cycling tests
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开发用于空气条件下无氧化裸铜粘合的微米级铜银复合浆料及其在老化和功率循环测试中的劣化机制
DOI：
10.1016/j.jmrt.2023.05.104
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Chen C
中科院分区：
文献类型：
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作者：
Chen C
新一代电力电子技术的发展要求半导体功率器件在250 °C以上的高温下具有更高的耐压能力、更高的电流密度。在本文中，我们提出使用组合的微米级Cu颗粒与Ag-氨基复合物，以在环境气氛中在低烧结压力和温度（300 °C）下实现稳健的直接Cu-Cu键合。在300 °C烧结温度和低压（1 MPa）下，Cu-Cu接头结构的结合强度高达45.3MPa。对于高温可靠性评估，将烧结的Cu-Ag复合Cu-Cu接头在空气中储存在250 °C下。接头的剪切强度在500 h时效后仍保持在30 MPa以上，表明在高温储存期间具有优异的机械稳定性。此外，在200 °C的结温下进行10，000次循环的功率循环测试期间，对具有烧结的Cu-Ag复合接头结构的SiC肖特基势垒二极管进行了评估。接头结构的热阻几乎不受影响，并且在功率循环测试后没有观察到大的分层，表明Cu-Ag复合材料在SiC功率器件封装中显示出显著的潜力。
The development of next-generation power electronics requires the semiconductor power devices with higher voltage endurance, higher electrical current density under high-temperature operations above 250 °C. Herein, we propose the uses of combined micron-sized Cu particles with Ag–amino composite to achieve a robust direct Cu–Cu bonding under a low sintering pressure and temperature (300 °C) in ambient atmosphere. The strong bonding strength of the Cu–Cu joint structure was evaluated as high as 45.3 MPa under 300 °C sintering temperature with low pressure (1 MPa). For the high temperature reliability evaluation, the sintered Cu–Ag composite Cu–Cu joints were stored at 250 °C in air. The shear strength of the joints remains above 30 MPa after 500 h ageing, suggesting an excellent mechanical stability during high temperature storage. Additionally, a SiC Schottky barrier diode with the sintered Cu–Ag composite joint structure was evaluated during a power cycle test at a junction temperature of 200 °C for 10,000 cycles. The thermal resistance of the joint structure was almost unaffected, and no large delamination was observed after the power cycle test, indicating that the Cu–Ag composite material exhibit remarkable potential in SiC power devices packaging.