Diffusion of tin in germanium studied by secondary ion mass spectrometry
Diffusion of tin in germanium studied by secondary ion mass spectrometry
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用二次离子质谱法研究锡在锗中的扩散
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
W. Gust
中科院分区：
文献类型：
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作者：
M. Friesel;U. Södervall;W. Gust
通过二次离子质谱法研究了555至930 °C温度范围内锡在本征锗中的扩散。在真空条件下，锡从气相和薄膜中扩散。在这两种情况下，纯金属被用作锡的来源。在所研究的温度范围内，锡的扩散系数作为温度的函数可以表示为D（cm 2/s）=8.4×102 exp[（−3.26 eV）/kT]。基于锡扩散和锗自扩散之间的相似性，得出锡通过单空位机制在锗中扩散的结论。
The diffusion of tin in intrinsic germanium has been studied in the temperature range from 555 to 930 °C by secondary ion mass spectrometry. Tin has been indiffused under vacuum conditions both from the gas phase and from thin films. In both cases, pure metal was used as a source of tin. In the studied temperature range the diffusion coefficient of tin as a function of temperature can be expressed as D(cm2/s)=8.4×102 exp[(−3.26 eV)/kT]. Based on the similarities between tin diffusion and germanium self‐diffusion, it is concluded that tin diffuses in germanium via the monovacancy mechanism.