All-optical switching due to state filling in quantum dots
All-optical switching due to state filling in quantum dots
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DOI：
10.1063/1.1751617
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发表时间：
2004-05
影响因子：
4
通讯作者：
R. Prasanth;J. Haverkort;A. Deepthy;Ew Erik Bogaart;van der Tol;Ea Evgeni Patent;G. Zhao;Qian Gong;van Pj René Veldhoven;R. Noetzel;Jh Joachim Wolter
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文献类型：
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作者：
R. Prasanth;J. Haverkort;A. Deepthy;Ew Erik Bogaart;van der Tol;Ea Evgeni Patent;G. Zhao;Qian Gong;van Pj René Veldhoven;R. Noetzel;Jh Joachim Wolter
我们报道了马赫-曾德尔干涉开关（MZI）中量子点（QD）的状态填充全光开关。MZI是使用含有单层InAs/InP量子点的InGaAsP/InP波导制造的。通过对一个MZI臂的光激发实现了1530-1570 nm探测光的开关，通过在InGaAsP带隙以下的激发，证明了折射率非线性完全是由量子点引起的。开关效率为5 rad/（μW吸收功率），对应的开关能量为6 fJ。使用宽尺寸分布的QD获得探针波长不敏感性。
We report all-optical switching due to state filling in quantum dots (QDs) within a Mach–Zehnder interferometric switch (MZI). The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530–1570 nm probe beam is switched by optical excitation of one MZI arm. By exciting below the InGaAsP band gap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(μW absorbed power), corresponding to a 6 fJ switching energy. Probe wavelength insensitivity was obtained using a broad size distribution of QDs.