High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
复制标题
DOI：
10.1063/1.3056628
复制
发表时间：
2008-12
影响因子：
4
通讯作者：
Xinhe Zheng;R. Horng;D. Wuu;M. Chu;Wen-Yih Liao;Ming-Hsien Wu;R. Lin;Yuan-Chieh Lu
中科院分区：
文献类型：
--
作者：
Xinhe Zheng;R. Horng;D. Wuu;M. Chu;Wen-Yih Liao;Ming-Hsien Wu;R. Lin;Yuan-Chieh Lu
采用金属有机化学气相沉积方法在(0001)取向的蓝宝石衬底上生长了高质量的p-GaN/i-In0.1Ga0.9N/n-GaN异质结外延层。高分辨X射线衍射(HRXRD)中InGaN峰周围的Pendellosung条纹证实了InGaN和GaN薄膜之间存在尖锐的界面。相应的高分辨X射线衍射和光致发光测量表明，没有可观察到的相分离。晶体质量的提高产生了高性能的光伏电池，在标准AM 1.5条件下，开路电压约为2.1 eV，填充系数高达81%。暗电流-电压测量显示出非常大的分流电阻，这意味着器件中的泄漏电流很小，因此在照明情况下实现了高填充系数。
High-quality p-GaN∕i-In0.1Ga0.9N∕n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.