Imperfection-enabled memristive switching in van der Waals materials
Imperfection-enabled memristive switching in van der Waals materials
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DOI：
10.1038/s41928-023-00984-2
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发表时间：
2023-07
影响因子：
34.3
通讯作者：
Mengjiao Li;Hefei Liu;Ruoyu Zhao;Feng‐Shou Yang;Mingrui Chen;Ye Zhuo;Chongwu Zhou;Han Wang
中科院分区：
文献类型：
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作者：
Mengjiao Li;Hefei Liu;Ruoyu Zhao;Feng‐Shou Yang;Mingrui Chen;Ye Zhuo;Chongwu Zhou;Han Wang
忆阻器件可以提供动态行为、模拟可编程性以及缩放和集成能力。因此，它们在传统和非传统计算范例的信息处理和存储设备的开发中具有潜在的用途。它们的忆阻开关过程主要源于对结构缺陷或成分杂质（通常称为缺陷）的数量和位置的调制。虽然基于传统块体材料的忆阻器的潜在机制和潜在应用已经被广泛研究，但是基于货车德瓦尔斯材料的忆阻器只是最近才被考虑。在这里，我们研究了在货车德瓦尔斯材料中实现的忆阻开关。我们探索缺陷如何与范德瓦尔斯材料固有的物理化学性质一起创造不同的开关机制，从而提供一系列设计忆阻器件中开关行为的机会。货车材料。我们还讨论了材料选择，机制调查和开关均匀性控制方面的挑战，并考虑货车德瓦尔斯忆阻器在系统级实现高效计算技术的潜力。
Memristive devices can offer dynamic behaviour, analogue programmability, and scaling and integration capabilities. As a result, they are of potential use in the development of information processing and storage devices for both conventional and unconventional computing paradigms. Their memristive switching processes originate mainly from the modulation of the number and position of structural defects or compositional impurities—what are commonly referred to as imperfections. While the underlying mechanisms and potential applications of memristors based on traditional bulk materials have been extensively studied, memristors based on van der Waals materials have only been considered more recently. Here we examine imperfection-enabled memristive switching in van der Waals materials. We explore how imperfections—together with the inherent physicochemical properties of the van der Waals materials—create different switching mechanisms, and thus provide a range of opportunities to engineer switching behaviour in memristive devices. We also discuss the challenges involved in terms of material selection, mechanism investigation and switching uniformity control, and consider the potential of van der Waals memristors in system-level implementations of efficient computing technologies.