Single- and multi-wall carbon nanotube field-effect transistors
Single- and multi-wall carbon nanotube field-effect transistors
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DOI：
10.1063/1.122477
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发表时间：
1998-10-26
影响因子：
4
通讯作者：
Avouris, P
中科院分区：
文献类型：
--
作者：
Martel, R;Schmidt, T;Avouris, P
我们制作了基于单个单壁和多壁碳纳米管的场效应晶体管，并分析了它们的性能。通过纳米管的传输主要是由空穴，在室温下，它似乎是扩散，而不是弹道。通过改变栅极电压，我们成功地调制了一个单壁器件的电导超过5个数量级。多壁纳米管通常没有栅极效应，但结构变形（在我们的例子中是一个塌陷的管）可以使它们像场效应晶体管一样工作。(C)1998年美国物理学会。【S0003-6951（98）00143-0】。
We fabricated field-effect transistors based on individual single-and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations-in our case a collapsed tube-can make them operate as field-effect transistors. (C) 1998 American Institute of Physics. [S0003-6951(98)00143-0].