Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs
Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs
复制标题
图案化蓝宝石衬底形状对 GaN 基 LED 光输出功率的影响
DOI：
10.1109/lpt.2011.2142397
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发表时间：
2011-07-15
影响因子：
2.6
通讯作者：
Wang, Huai-Bing
中科院分区：
文献类型：
--
作者：
Huang, Xiao-Hui;Liu, Jian-Ping;Wang, Huai-Bing
采用包括反射和折射的光学模拟方法，模拟了不同倾斜角度和填充因子（f）的不同图案化蓝宝石衬底（PSS）上氮化镓（GaN）基发光二极管（LED）的光照强度。结果表明，倾斜角度在25° ~ 60°之间的微金字塔阵列能够有效地提高照明强度，当倾斜角度在33°左右时达到峰值。光照强度随f的增大而单调增强。除了上述工作，GaN-LED的PSS上的外延生长进行了研究比较。PSS上的GaN-LED的输出功率随着模拟光照明强度的增加而增加。实验结果验证了仿真的正确性。
An optical simulation including reflection and refraction is used to simulate the light illumination intensity of gallium nitride (GaN)-based light-emitting diodes (LEDs) on varied patterned sapphire substrates (PSS) with different slanted angles and fill factors (f ). It is found that a micro pyramid array with a slanted angle from 25° to 60° is able to effectively improve illumination intensity which reaches to summit as the slanted angle is around 33°. And illumination intensity enhances monotonously as f increases. In addition to the mentioned work, epitaxial growth of GaN-LEDs on PSS is investigated for comparison. The output power of GaN-LEDs on PSS increases with simulated light illumination intensity increasing. The experimental results prove the simulation.