Low Switching Power Neuromorphic Perovskite Devices with Quick Relearning Functionality
Low Switching Power Neuromorphic Perovskite Devices with Quick Relearning Functionality
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DOI：
10.1002/aelm.202300285
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发表时间：
2023-07
影响因子：
6.2
通讯作者：
D. S. Assi;M. Haris;V. Karthikeyan;S. Kazim;Shahzad Ahmad;Vellaisamy A. L. Roy
中科院分区：
文献类型：
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作者：
D. S. Assi;M. Haris;V. Karthikeyan;S. Kazim;Shahzad Ahmad;Vellaisamy A. L. Roy
为了降低能耗，人们对硅以外的技术的需求越来越大，因为硅是神经形态人工智能设备的电子材料。有机卤化物钙钛矿具有能量效率和良好的适应性，可以模仿人类大脑中突触功能的特征。在这方面，本研究设计和开发基于CsFAPbI3的忆阻神经形态器件，通过采用粉末工程方法，可以在低功率下切换并显示更大的耐久性。基于CsFAPbI3的器械的神经形态特征显示出所施加电刺激脉冲的超高配对脉冲易化指数。此外，从短期记忆到长期记忆的转变需要超低能量和长弛豫时间。学习和训练周期表明，基于CsFAPbI3的器件表现出更快的学习和记忆过程，这是因为与其他钙钛矿相比，它们具有更长的载流子寿命。这些结果提供了一种实现与人脑性能同步的低功耗神经形态设备的途径。
In the quest to reduce energy consumption, there is a growing demand for technology beyond silicon as electronic materials for neuromorphic artificial intelligence devices. Equipped with the criteria of energy efficiency and excellent adaptability, organohalide perovskites can emulate the characteristics of synaptic functions in the human brain. In this aspect, this study designs and develops CsFAPbI3‐based memristive neuromorphic devices that can switch at low power and show larger endurance by adopting the powder engineering methodology. The neuromorphic characteristics of the CsFAPbI3‐based devices exhibit an ultra‐high paired‐pulse facilitation index for an applied electric stimuli pulse. Moreover, the transition from short‐term to long‐term memory requires ultra‐low energy with long relaxation times. The learning and training cycles illustrate that the CsFAPbI3‐based devices exhibit faster learning and memorization process owing to their larger carrier lifetime compared to other perovskites. The results provide a pathway to attain low‐power neuromorphic devices that are synchronic to the human brain's performance.