Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
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DOI：
10.1063/1.127012
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发表时间：
2000-07
影响因子：
3.5
通讯作者：
O. Shchekin
中科院分区：
文献类型：
--
作者：
O. Shchekin
给出了单层和两层InAs量子点激光器的数据，这些量子点激光器降低了其激光阈值的温度敏感性。通过调整点的大小和组成，使基区和第一激发辐射跃迁能之间的能量间隔增加到10~4 meV，点密度为∼3.1×10~(10)cm/−~2。单叠层和双叠层激光器的解理阈值电流密度分别为43和35A/cm~2。基态辐射跃迁和第一激发态辐射跃迁之间的较大能量间隔使得阈值温度灵敏度得到显著改善。
Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold.