Magnetic switching in 100 nm patterned pseudo spin valves
Magnetic switching in 100 nm patterned pseudo spin valves
复制标题
100 nm 图案伪自旋阀中的磁开关
DOI：
10.1109/20.951057
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发表时间：
2001
影响因子：
2.1
通讯作者：
Henry I. Smith
中科院分区：
文献类型：
--
作者：
F. Castaño;Y. Hao;S. Haratani;C. Ross;B. Vögeli;M. Walsh;Henry I. Smith
开发可操作的高密度磁阻随机存取存储器（MRAM）器件的进展关键地依赖于定制在小图案化伪自旋阀（PSV）元件阵列中发生的磁切换。Co/Cu/NiFe PSV薄膜是在磁场存在下通过溅射产生的，具有面内各向异性，软NiFe的开关场通常为10 Oe，硬Co的开关场通常为40 Oe。这些薄膜被图案化为尺寸为80 nm至10 /spl μ/m的椭圆形和圆形元件阵列。通过图案化工艺保留了组成调制PSV元件的这些大面积阵列中的分层结构。的点阵列的磁滞测量表明，硬层的开关场的显着增加，减少元素的大小，达到600 Oe的最小的元素。此外，在图案化元件中，由于层之间的静磁耦合，软层在场反转之前切换，导致剩磁处的反平行对准。
Progress in developing operative high-density magnetoresistive random access memory (MRAM) devices relies critically on tailoring the magnetic switching occurring in arrays of small patterned pseudo spin valve (PSV) elements. Co/Cu/NiFe PSV films, produced by sputtering in the presence of a magnetic field, have an in-plane anisotropy and switching fields of typically 10 Oe for the soft NiFe and 40 Oe for the hard Co. These films were patterned into arrays of elliptical and circular elements with dimensions of 80 nm to 10 /spl mu/m. The layered structure in these large-area arrays of compositionally modulated PSV elements is preserved through the patterning processes. Hysteresis measurements of the dot arrays show that the switching field of the hard layer increases significantly with decreasing element size, reaching 600 Oe for the smallest elements. Additionally, in patterned elements the soft layer switches prior to field reversal due to magnetostatic coupling between the layers, leading to antiparallel alignment at remanence.