Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
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DOI：
10.1016/j.apsusc.2017.02.187
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发表时间：
2017-06-15
影响因子：
6.7
通讯作者：
Shinohara, Yoshikazu
中科院分区：
文献类型：
--
作者：
Goto, Masahiro;Sasaki, Michiko;Shinohara, Yoshikazu
利用组合溅射镀膜系统(COSCOS)制备了P型和n型碲化铋薄膜。在溅射镀膜过程中，通过控制射频功率的镀膜条件，改变了薄膜的晶体结构和择优取向。利用该技术优化了p型和n型薄膜及其无量纲品质因数ZT。用X射线衍射仪、能谱仪和原子力显微镜对薄膜的晶体结构、择优取向、材料组成和表面形貌等性能进行了分析。测试了材料的塞贝克系数、电导率和热导率等热电性能。在射频功率为90 W和120 W时，n型和p型碲化铋薄膜的热电转变温度分别为0.27和0.40。该工艺可用于制备无掺杂的碲化铋热电p-n组件。(C)2017爱思唯尔B.V.保留所有权利。
p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively.The proposed technology can be used to fabricate thermoelectric p-n modules of bismuth telluride without any doping process. (C) 2017 Elsevier B.V. All rights reserved.