The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE
The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE
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DOI：
10.1002/pssb.200565115
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发表时间：
2006-06-01
影响因子：
1.6
通讯作者：
Sawaki, Nobuhiko
中科院分区：
文献类型：
--
作者：
Narita, Tetsuo;Honda, Yoshio;Sawaki, Nobuhiko
采用选择区域金属有机物气相外延技术在（111）Si衬底上生长了AlGaN/GaN异质结GaN。所得到的GaN为梯形条带，侧面具有（I 1 01）面，顶部具有（0001）面。通过阴极发光分析，研究了Al组分在小平面上的分布作为位置的函数。研究了不同生长条件下Ga在AlGaN（0001）面上的表面扩散。结果发现，通过提高生长温度或降低Al组分，扩散长度增加。根据扩散长度与温度的关系，估算了Ga物种的激活能。结果取决于Al组成x; 1.23 +/-0.44eV（x = 0.05）、1.84 +/-0.58eV（x = 0.10）和2.72 +/-0.73eV（x = 0.15）。(c)2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
The growth of GaN with an AlGaN/GaN heterostructure was attempted on a (111) Si substrate by selective area metal organic vapor phase epitaxy. The GaN obtained was a trapezoidal stripe with (I 1 01) facets on the sides and a (0001) facet on the top. The distribution of the Al composition on the facets was investigated by cathodeluminescence analyses as a function of the position. The surface diffusion of Ga on the (0001) AlGaN facet was studied under various growth conditions. It was found that the diffusion length is enhanced by elevating the growth temperature or lowering the A1 composition. By the temperature dependence of the diffusion length, the activation energy of the Ga species was estimated. The results depended on the Al composition x; 1.23 +/- 0.44 eV (x = 0.05), 1.84 +/- 0.58 eV (x = 0.10) and 2.72 +/- 0.73 eV (x = 0.15). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.