Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors
Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors
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压控双波长 ZnO/Au/MgZnO 紫外光电探测器
DOI：
10.1016/j.materresbull.2018.03.054
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发表时间：
2018-07-01
影响因子：
5.4
通讯作者：
Hou, Jianhua
中科院分区：
文献类型：
--
作者：
Hu, Nan;Jiang, Dayong;Hou, Jianhua
在这项工作中，通过在具有 ZnO/Au/MgZnO 结构的 SiO2 衬底上生长 ZnO 和 MgZnO 层，成功构建了双波长紫外光电探测器。光电探测器表现出高性能，并研究了不同厚度的 MgZnO 层的影响。此外，简单地通过调节器件上施加的电压，两个响应峰（由MgZnO和ZnO层引起）的比率随之改变。检测特性可能源于具有不同增长率的两层，其中肖特基结的存在起着重要作用。该光电探测器对于制造实际应用的双波长光电器件具有重要意义。
In this work, dual-wavelength UV photodetectors were successfully constructed by growing ZnO and MgZnO layers on SiO2 substrates with ZnO/Au/MgZnO structure. The photodetectors exhibited high performance and the influence of different thickness of MgZnO layers was investigated. Moreover, simply by adjusting the applied voltage on the devices, the ratio of the two response peaks (caused by MgZnO and ZnO layers) changed therewith. The detecting properties may originate from the two layers having different increasing rates where the existence of Schottky junctions plays an important role. The photodetectors are meaningful for fabricating dual-wavelength optoelectronic devices for practical applications.