Linear magnetoresistance in topological insulator thin films: Quantum phase coherence effects at high temperatures
Linear magnetoresistance in topological insulator thin films: Quantum phase coherence effects at high temperatures
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DOI：
10.1063/1.4773207
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
Heiman, D.
中科院分区：
文献类型：
--
作者：
Assaf, B. A.;Cardinal, T.;Heiman, D.
除了在低温和低磁场下拓扑绝缘体的磁阻（MR）中观察到的弱反定域尖点之外，我们发现Bi2Te2Se的高场MR在磁场中是线性的。在B = 14 T的磁场下，这种线性磁电阻的斜率在T = 7~150 K范围内几乎与温度无关。我们发现，线性MR来自对数相位相干分量和二次分量之间的竞争。量子相位相干性在高温下占主导地位，其中相干长度保持长于电子的平均自由程。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4773207]
In addition to the weak antilocalization cusp observed in the magnetoresistance (MR) of topological insulators at low temperatures and low magnetic fields, we find that the high-field MR in Bi2Te2Se is linear in field. At fields up to B = 14 T, the slope of this linear-like MR is nearly independent of temperature over the range T = 7 to 150 K. We find that the linear MR arises from the competition between a logarithmic phase coherence component and a quadratic component. The quantum phase coherence dominates up to high temperatures, where the coherence length remains longer than the mean free path of electrons. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773207]