IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI
IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI
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DOI：
10.1103/physrevb.48.4437
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发表时间：
1993-08-15
影响因子：
3.7
通讯作者：
THOMAS, RN
中科院分区：
文献类型：
--
作者：
KUNZER, M;JOST, W;THOMAS, RN
轻掺杂最重 V 族原子铋 (Bi) 的 GaAs 已通过传统电子自旋共振 (ESR) 和通过磁圆二色性 (MCD) 吸收检测到的 ESR 进行了研究。观察到一个新的 Bi 相关锐线 MCD 带，并在其上发现了两条 MCD-ESR 线。它们被证明是由单离子化的 Bi(Ga) 双供体产生的。最值得注意的是，发现 Bi 总含量的很大一部分（约 10%）占据了 Ga 位点。 Bi(Ga) MCD 吸收带暂时归属于与单电离双供体 Bi(Ga)+ 深度结合的激子。
GaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been discovered. They are shown to arise from the singly ionized Bi(Ga) double donor. Most remarkably, a substantial fraction, about 10%, of the total Bi content is found to occupy the Ga site. The Bi(Ga) MCD absorption band is tentatively assigned to an exciton deeply bound to the singly ionized double donor Bi(Ga)+.