High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
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DOI:
10.1063/1.2898203
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发表时间:
2008-03-10
影响因子:
4
通讯作者:
Takeya, J.
中科院分区:
文献类型:
--
作者:
Ono, S.;Seki, S.;Takeya, J.
We report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid (IL) electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1 mu F/cm(2) even at 0.1 MHz. With high carrier mobility of 1.2 cm(2)/V s in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the IL/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces. (c) 2008 American Institute of Physics.