ANNEALING AND CRYSTALLIZATION PROCESSES IN TETRAHEDRALLY BONDED BINARY AMORPHOUS-SEMICONDUCTORS
ANNEALING AND CRYSTALLIZATION PROCESSES IN TETRAHEDRALLY BONDED BINARY AMORPHOUS-SEMICONDUCTORS
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DOI：
10.1080/13642818408238875
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发表时间：
1984-01-01
期刊：
影响因子：
--
通讯作者：
SHIMIZU, T
中科院分区：
文献类型：
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作者：
MORIMOTO, A;KATAOKA, T;SHIMIZU, T
本文报道了用射频法制备的Si-C、S-N、Si-Ge和Ge-C合金薄膜的拉曼散射、红外吸收、X射线衍射和电子自旋共振随退火温度的测量结果。溅起的血。非晶态Si-C和Si-N薄膜随退火倾向于偏析成化学计量比的碳化硅和氮化硅以及过剩的元素团簇，晶化温度随C或N含量的增加而升高。非晶态Si-Ge薄膜经无偏析退火后晶化，其晶化温度随Ge含量的增加而单调下降。非晶态Ge-C薄膜经退火晶化后形成类Ge和类C团簇，晶化温度在Ge0·42C0·58附近有一个极大值。
Results of Raman scattering, infrared absorption, X-ray diffraction and electron spin resonance measurements as a function of annealing temperature are reported for Si-C, S-N, Si-Ge and Ge-C alloy films prepared by r.f. sputtering. Amorphous Si-C and Si-N Films tend to segregate into stoichiometric clusters (SiC and Si3N4) and excess element clusters with annealing, and the crystallization temperature for these films increases with increasing C or N content. Amorphous Si-Ge films are crystallized by annealing without segregation, and the crystallization temperature for these films decreases monotonically with increasing Ge content. Amorphous Ge-C films are crystallized by annealing with segregation into Ge- and C-like clusters, and the crystallization temperature has a maximum value around Ge0·42C0·58.