Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography
Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography
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DOI：
10.1063/1.4922699
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发表时间：
2015-06
影响因子：
4
通讯作者：
Zhichao Zhu;Shuanghao Wu;Chaofan Xue;Jun Zhao;Liansheng Wang;Yanqing Wu;Bo Liu;Chuanwei Cheng-
中科院分区：
文献类型：
--
作者：
Zhichao Zhu;Shuanghao Wu;Chaofan Xue;Jun Zhao;Liansheng Wang;Yanqing Wu;Bo Liu;Chuanwei Cheng-
利用软X射线干涉光刻和原子层沉积相结合的方法在Bi4Ge3O12(BGO)闪烁体表面制备光子晶体结构，以提取由于全内反射而被困在闪烁体内部的光。获得了95.1%的波长和出射角积分增强。这种方法有利于制备大面积、高折射率对比度的光子晶体结构，实现了逝去光场与光子晶体结构的高效耦合。总的来说，该方法也适用于实际应用中需要较大面积的其他发光器件。
Soft-X-ray interference lithography is utilized in combination with atomic layer deposition to prepare photonic crystal structures on the surface of Bi4Ge3O12 (BGO) scintillator in order to extract the light otherwise trapped in the internal of scintillator due to total internal reflection. An enhancement with wavelength- and emergence angle-integration by 95.1% has been achieved. This method is advantageous to fabricate photonic crystal structures with large-area and high-index-contrast which enable a high-efficient coupling of evanescent field and the photonic crystal structures. Generally, the method demonstrated in this work is also suitable for many other light emitting devices where a large-area is required in the practical applications.