Giant direct magnetoelectric effect in strained multiferroic heterostructures
Giant direct magnetoelectric effect in strained multiferroic heterostructures
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DOI：
10.1103/physrevb.85.140401
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发表时间：
2012-04-02
影响因子：
3.7
通讯作者：
Bellaiche, L.
中科院分区：
文献类型：
--
作者：
Janolin, Pierre-Eymeric;Pertsev, Nikolay A.;Bellaiche, L.
用第一性原理计算了铁磁衬底在铁电薄膜中诱导的晶格应变所介导的直接磁电效应。在此基础上，计算了不同退极场下Pb0.52 Ti0.48)O-3薄膜的铁电极化应变灵敏度和薄膜介电常数与面内双轴应变的函数关系。结果表明，ME电压系数随应变的变化呈非单调变化，在可通过电边界条件控制的应变范围内，ME电压系数可能达到超过100V cm(-1)Oe(-1)的巨值。
The direct magnetoelectric (ME) effect mediated by lattice strains induced in a ferroelectric film by a ferromagnetic substrate is evaluated using first-principles-based calculations. To that end, the strain sensitivity of ferroelectric polarization and the film permittivity are calculated as a function of the in-plane biaxial strain for Pb(Zr0.52Ti0.48)O-3 films under various depolarizing fields. It is found that the ME voltage coefficient varies nonmonotonically with this strain and may reach giant values exceeding 100 V cm(-1) Oe(-1) over a strain range that can be controlled through the electrical boundary conditions.