Dramatically improving thermoelectric performance of topological half-Heusler compound LuPtSb via hydrostatic pressure
Dramatically improving thermoelectric performance of topological half-Heusler compound LuPtSb via hydrostatic pressure
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通过静水压力显着提高拓扑半赫斯勒化合物LuPtSb的热电性能
DOI：
10.1039/c8ta07350c
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发表时间：
2018-11-07
影响因子：
11.9
通讯作者：
Shi, Jing
中科院分区：
文献类型：
--
作者：
Huang, Shan;Liu, Xiaowei;Shi, Jing
最近的研究表明，许多具有拓扑特性的材料表现出新颖的热电性能，例如BiSe、Bi2Te3和Bi2Se3。同时，在一些半霍斯勒材料中也发现了拓扑非平凡态。通过在密度泛函理论和玻尔兹曼输运理论的框架内研究典型的拓扑半赫斯勒化合物 LuPtSb，我们发现品质因数 (ZT) 在 900 K 时通过静水压力从 0.3 急剧增加到 1.5。拓扑状态和热电之间似乎存在很强的关系，我们的工作为理解这种关系提供了一些新的、独特的见解。
Recent research studies show that many materials with topological properties exhibit novel thermoelectric performance, such as BiSe, Bi2Te3 and Bi2Se3. Meanwhile, the topologically non-trivial states are also discovered in some half-Heusler materials. By investigating the typical topological half-Heusler compound LuPtSb within the frameworks of both density functional theory and Boltzmann transport theory, we discovered that the figure of merit (ZT) dramatically increases from 0.3 to 1.5 at 900 K via hydrostatic pressure. There seems to be a strong relationship between the topological state and thermoelectrics, and our work provides some new and unique insights to understand the relationship.