Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination
Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination
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GaAs (001) 衬底上 In(Al,Ga)As 变质缓冲层的倾斜研究：一种用于倾斜测定的新技术
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发表时间：
2016
期刊：
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通讯作者：
D. Biswas
中科院分区：
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作者：
Rahul Kumar;D. Biswas
研究了GaAs（001）衬底上用分子束外延（MBE）生长的InGaAs和InAlAs基变质缓冲结构在不同生长条件下的晶体倾斜和表面形貌。压应变变质缓冲层表现出各向异性的应变松弛。提出了一种基于X射线衍射的倾斜测量新技术，该技术可以分离各向异性应变的影响。已发现，依赖于组成的分级方案，生长温度和表面的不规则性。具有随机表面的样品显示出比显示出规则交叉影线的样品更小的倾斜。在较高的生长温度下，已经观察到倾斜的减少，并与在低温下的其他非活性滑移系的热激活相关。在低温下，也为连续分级的样品，倾斜的减少已被观察到，并与较慢的松弛，提供了机会，所有的滑移系统参与和竞争。
Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxation. A novel tilt determination technique based on X‐ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Samples having random surfaces show smaller tilt than that of samples showing regular cross‐hatch. At higher growth temperature, reduction of tilt has been observed and correlated with thermal activation of otherwise inactive slip systems at low temperature. At low temperature and also for continuously graded samples, reduction of tilt has been observed and correlated with the slower relaxation that provide the opportunity for all the slip systems to participate and compete.