Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_<1-x>Sr_xSi_2 Films on Si(111) by Molecular Beam Epitaxy

Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_<1-x>Sr_xSi_2 Films on Si(111) by Molecular Beam Epitaxy
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分子束外延在Si(111)上外延生长硅基三元合金半导体Ba_<1-x>Sr_xSi_2薄膜

DOI:
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发表时间:
2004
期刊:
Japanese Journal of Applied Physics Vol.43, No.6B
影响因子:
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通讯作者:
Y.Inomata et al.
Y.Inomata et al.
中科院分区:
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文献类型:
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作者:
Y.Inomata et al.;Y.Inomata et al.;Y.Inomata et al.

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