Design of photonic light-trapping structures for ultra-thin solar cells
Design of photonic light-trapping structures for ultra-thin solar cells
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DOI：
10.1117/12.2550136
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发表时间：
2020-03
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影响因子：
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通讯作者：
P. Pearce;L. Sayre;Andrew J. Johnson;L. Hirst;N. Ekins‐Daukes
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文献类型：
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作者：
P. Pearce;L. Sayre;Andrew J. Johnson;L. Hirst;N. Ekins‐Daukes
超薄（< 100纳米吸收体厚度）砷化镓电池是一种很有前途的太阳能电池设计途径，具有更高的空间应用辐射容忍度。为了解决通过这种薄吸收层的高传输损耗，采用严格的耦合波分析和半解析波导模型来研究放置在薄（86 nm）砷化镓电池背面的银/介电六角形光栅结构的有效性。该光栅由介电介质（SiNχ）中的银片构成，模拟结果表明，当光栅厚度约为100 nm时，最佳周期为600-700 nm。利用外部量子效率和光电流电压测量的结果，没有光捕获特征的薄器件，具有光栅结构的电池的预测效率是没有光捕获设计的电池的两倍，显示出通过光捕获增强电流的巨大潜力。
Ultra-thin (< 100 nm absorber thickness) GaAs cells are a promising avenue for the design of solar cells with increased radiation tolerance for space applications. To address the high transmission loss through such thin absorber layers, rigorous coupled-wave analysis and a semi-analytical waveguide model are used to investigate the effectiveness of silver/dielectric hexagonal grating structures placed on the back of a thin (86 nm) GaAs cell. The grating is formed of silver disks in a dielectric (SiNχ), and simulations indicate an optimum period of 600-700 nm with a grating thickness around 100 nm. Using the results of external quantum efficiency and light current-voltage measurements of thin devices without light-trapping features, predicted efficiencies for cells with a grating structure are found to be up to double that of the cells without light-trapping designs, showing a significant potential for current enhancement through light-trapping.