Giant converse magnetoelectric effect of AlN-(Fe90Co10)78Si12B10 thin film composites
Giant converse magnetoelectric effect of AlN-(Fe90Co10)78Si12B10 thin film composites
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DOI：
10.1016/j.jallcom.2013.01.150
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发表时间：
2013-06
影响因子：
6.2
通讯作者：
Bei Tong;Xiaofei Yang;J. Ouyang;G. Lin;Shi Chen
中科院分区：
文献类型：
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作者：
Bei Tong;Xiaofei Yang;J. Ouyang;G. Lin;Shi Chen
采用射频磁控溅射法在Si/SiO2衬底上制备了AlN-（Fe 90 Co 10）78 Si 12 B10薄膜复合材料，研究了其巨匡威磁电效应。详细研究了偏置磁场Hdc、交流驱动电压Vac和交流频率f对这种薄膜复合材料CME响应的影响。结果表明，AlN-（Fe_（90）Co_（10））_（78）Si_（12）B_（10）薄膜复合材料在很低的Hdc（11 Oe）下具有最大的CME系数α B（0.0943mGcm/V）。在f= 10 kHz，Hdc= 11 Oe时，磁感应强度B与电压在1- 20 V范围内呈良好的线性关系。在1.5 ~ 100 kHz范围内，α B与交流频率f几乎呈线性关系。这使得这种异质结构薄膜复合材料在电磁场检测方面具有很好的应用前景。
Giant converse magnetoelectric (CME) effect has been found in AlN-(Fe90Co10)78Si12B10thin film composites fabricated by RF magnetron sputtering on Si/SiO2substrate. The influence of bias magnetic field Hdc, driven ac voltage Vacand ac frequency f on the CME response of this kind of thin film composites was investigated in detail. The results demonstrated that the AlN-(Fe90Co10)78Si12B10thin film composites possess a maximum CME coefficient αBof 0.0943mGcm/V at a very low Hdcof 11Oe. It was also observed that the magnetic induction B has an excellent linear relationship to Vacin the range of 1–20V at f=10kHz and Hdc=11Oe. Furthermore, αBresponds almost linearly to the ac frequency f from 1.5kHz to 100kHz. These made the heterostructure thin film composites exhibit a promising potential in magnetic and electric field detecting application.