Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes
Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes
复制标题
具有多壁碳纳米管源极和漏极的并五苯基薄膜晶体管
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Jung
中科院分区：
文献类型：
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作者：
Chia‐hao Chang;C. Chien;Jung
在这封信中，作者提出了一种实用可靠的方法-使用沉积的多壁碳纳米管（MWCNTs）作为源极和漏极-用于降低并五苯底部接触薄膜晶体管的接触电阻（Rc）。装置的Rc值与沉积的MWCNTs的合成长度密切相关;最低值为3×108Ωμm。最大的饱和迁移率为0.14cm 2 scinVs;当使用最大的阈值电压（Gm，max）外推法而不是恒定电流法确定阈值电压时，该值高达三倍。开/关比大于106。
In this letter, the authors propose a practical and reliable approach—using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes—for reducing the contact resistance (Rc) in pentacene-based bottom-contact thin-film transistors. The value of Rc of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3×108Ωμm. The largest saturation mobility was 0.14cm2∕Vs; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (Gm,max) extrapolation method, rather than the constant current method. The on/off ratio was more than 106.