Low-Temperature Formation of Large-Grain (≧10μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning
Low-Temperature Formation of Large-Grain (≧10μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning
复制标题
金诱导结晶结合扩散势垒图案化在绝缘体上受控位置低温形成大晶粒（≥10μm）Ge
DOI：
10.1149/2.0161603jss
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发表时间：
2016
影响因子：
2.2
通讯作者：
and T. Sadoh
中科院分区：
文献类型：
--
作者：
R. Aoki;Jong-Hyeok Park;M. Miyao;and T. Sadoh
采用a-Ge/Au叠置结构，在低温（300℃）条件下，在绝缘子上形成位置控制的大晶粒（≥10 μm） Ge晶体。通过在a-Ge/Au界面中引入扩散屏障，即厚度为2 nm，具有3 - 20 μm直径开窗的薄al2o3层，可以选择性地从开窗中生长出Ge晶体。对于直径为20 μm的开窗，生长区域由多个Ge（111）晶粒组成。这是由于在打开的窗口周围产生了几个充当种子的核。随着开窗直径的减小，种子数量呈线性减少。结果表明，在直径为3 μm的开窗条件下，可在控制位置获得无晶界的（111）取向大（~ 10 μm）锗单晶。该技术将促进柔性电子和三维大规模集成电路的实现，其中基于ge的功能性高性能薄膜器件集成在柔性塑料衬底和/或非晶绝缘层上。
Formation of position-controlled large-grain (≥ 10 μm) Ge crystals on insulator is realized at low-temperature (300 C) by gold-induced-crystallization using a-Ge/Au stacked structures. By introduction of diffusion barriers, ie, thin-Al 2 O 3 layers (2 nm thickness), having open-windows (3–20 μm diameter) into the a-Ge/Au interfaces, Ge crystals are selectively grown from the open windows. For open-windows with diameter of 20 μm, the grown areas consist of several Ge (111) grains. This is attributed to that several nuclei acting as seed are generated around the perimeters of the open windows. The number of seeds is linearly decreased by decreasing of the open-window diameter. As a result,(111)-oriented large (∼ 10 μm) Ge single-crystals, without any grain boundary, are obtained at controlled positions for open-windows with diameter of 3 μm. This technique will facilitate realization of flexible electronics and 3-dimensional large-scale integrated circuits, where Ge-based functional high-performance thin-film devices are integrated on flexible plastic substrates and/or amorphous insulating layers.