Strong-field double ionization at the transition to below the recollision threshold
Strong-field double ionization at the transition to below the recollision threshold
复制标题
DOI：
10.1103/physreva.81.043402
复制
发表时间：
2010-04
影响因子：
2.9
通讯作者：
D. Ye;Jie Liu
中科院分区：
文献类型：
--
作者：
D. Ye;Jie Liu
我们使用半经典模型研究了强场双电离，在该模型中，用WKB方法考虑了回忆诱导的激发隧穿（RIET）效应。当激光强度低于重集阈值时，我们发现RIET和多重重集都变得显著，并且可以产生反相关（背对背）电子对。这两种机制在相关动量谱上留下了不同的足迹。作为过渡到回忆阈值以下的另一个特征，我们发现相关动量谱中的v形（或指状）结构逐渐消失。我们的模型计算与最近的氩原子实验进行了比较。
We investigate the strong-field double ionization using a semiclassical model, in which the recollision-induced excitation-tunneling (RIET) effect has been taken into account with the Wentzel-Kramers-Brillouin (WKB) approach. When the laser intensity is below the recollision threshold, we find that both RIET and multiple recollisions become significant and can produce the anticorrelated (back-to-back) electron pair. Distinct footprints left by these two mechanisms on the correlated momentum spectra have been identified. As another signature of the transition to below the recollision threshold regime, we find that the V-shaped (or fingerlike) structure in the correlated momentum spectra fades away. Our model calculations have been compared with a recent experiment on argon atoms.