Double-crystal rocking curve of the forbidden Si 222 reflection
Double-crystal rocking curve of the forbidden Si 222 reflection
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Si 222 禁反射双晶摇摆曲线
DOI：
10.1107/s0108767389003879
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
I. Smirnova
中科院分区：
文献类型：
--
作者：
I. R. Éntin;I. Smirnova
用高分辨技术获得了Si 222反射的双晶摇摆曲线。用Mo Kα辐射在浮区生长的硅单晶上测量了摇摆曲线的角半宽度，发现等于0.07”，这个值接近于根据已知的Si 222反射结构因子计算的值。结构因子的精确值为1.47（2）。对于氧浓度约为0.1018原子cm-3的直拉法生长的Si单晶，角半宽度高出2.5倍。摇摆曲线展宽的原因是硅晶格中存在氧。
The double-crystal rocking curve of the Si 222 reflection was obtained by a high-resolution technique. The angular half-width of the rocking curve was measured using Mo Kα radiation on a floating-zone-grown silicon single crystal and found equal to 0.07", this value being close to that calculated from the known structure factor of the Si 222 reflection. A refined value for the structure factor was 1.47 (2). For a Czochralski-grown Si single crystal with oxygen concentration ~.1018 atoms cm-3, the angular half-width is higher by a factor of 2.5. The rocking-curve broadening is explained by the presence of oxygen in the silicon lattice.