Aluminium oxide tunnel junctions: influence of preparation technique, sample geometry and oxide thickness
Aluminium oxide tunnel junctions: influence of preparation technique, sample geometry and oxide thickness
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DOI：
10.1016/s0040-6090(98)01427-8
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发表时间：
1999-03-26
期刊：
影响因子：
2.1
通讯作者：
Lohrengel, MM
中科院分区：
文献类型：
--
作者：
Diesing, D;Hassel, AW;Lohrengel, MM
Al/Al氧化物/Ag类型的隧道结可以向相邻的电解质发射约2 eV的热电子并引起氧化还原反应。我们开发了这种隧道系统的生产技术，该系统在室温下在大气和电解质中稳定。两种类型的Al基电极（线和玻璃上的蒸发膜），三种类型的氧化物膜（气相氧化，阳极氧化和物理气相沉积）与15 nm厚的Ag顶部电极膜相结合。PVD氧化膜是多孔的，具有大的厚度分布。这导致粗糙的银顶部电极，并因此导致弱的耐腐蚀性。只有铝丝/阳极氧化膜和铝膜/气相氧化膜两种情况下才能得到稳定的氧化膜。氧化物在其性质上几乎相等，并且形成独立于样品几何形状的致密均匀膜。阳极膜可以形成为具有各种厚度，但是离子电流可能超过隧道电流。成功的层序列是Al膜/气相氧化物（2.5nm）/Ag（15 nm），其中热电子的发射电流为约1 mA/cm（2）。(C)1999年Elsevier Science S.A. All rights reserved.
Tunnel junctions of the type Al/Al oxide/Ag can emit hot electrons of about 2 eV to an adjacent electrolyte and cause redox reactions. We developed a production technique of such tunnel systems, which are stable at room temperature in atmosphere and in electrolyte. Two types of Al base electrodes (wires and evaporated films on glass), three types of oxide films (gas phase oxidation, anodic oxidation and physical vapour deposition) were combined with an Ag top electrode film of 15 nm thickness. PVD oxide films are porous with a large thickness distribution. This causes a rough silver top electrode and therefore a weak corrosion resistance. Stable oxide films were only obtained for the pairs Al wire/anodic oxide and Al film/gas phase oxide. The oxides are almost equal in their properties and form dense homogenous films independent of the sample geometry. Anodic films can be formed with various thicknesses, but ionic currents may exceed the tunnel currents. A successful layer sequence was Al film/gas phase oxide (2.5 nm)/Ag (15 nm) with an emission current of hot electrons of about 1 mA/cm(2). (C) 1999 Elsevier Science S.A. All rights reserved.