Additively manufactured ultra-high vacuum chamber for portable quantum technologies
Additively manufactured ultra-high vacuum chamber for portable quantum technologies
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DOI：
10.1016/j.addma.2021.101898
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发表时间：
2021-04-01
影响因子：
11
通讯作者：
Hackermuller, L.
中科院分区：
文献类型：
--
作者：
Cooper, N.;Coles, L. A.;Hackermuller, L.
增材制造对多个领域的研究和工业产生了巨大的影响，但到目前为止，用于超高真空应用的增材制造系统的生产已经被证明是难以捉摸的，并且被广泛认为是不可能的。我们展示了第一个增材制造的真空室在低于10 × 10毫巴的压力下工作，通过离子泵电流阅读测量，并表明增材制造材料的总气体输出的相应上限为3.6 × 10（-13）毫巴l/（smm（2））。该腔室由AlSi 10 Mg通过激光粉末床熔化制成。详细的表面分析表明，氧化的富镁表面层形成在增材制造材料上，并在实现真空兼容性方面发挥关键作用。我们的研究结果不仅可以实现现有系统的轻量化，紧凑型版本，而且还可以通过消除传统制造考虑因素对组件设计的限制，促进快速原型设计，并解锁实验科学中迄今无法实现的选项。这与便携式量子传感器的新兴领域特别相关-我们通过使用腔室为冷Rb-85原子创建磁光阱来说明这一点-并且将对高真空和超高真空的所有应用领域产生重大影响。
Additive manufacturing is having a dramatic impact on research and industry across multiple sectors, but the production of additively manufactured systems for ultra-high vacuum applications has so far proved elusive and widely been considered impossible. We demonstrate the first additively manufactured vacuum chamber operating at a pressure below 10 10 mbar, measured via an ion pump current reading, and show that the corresponding upper limit on the total gas output of the additively manufactured material is 3.6 x 10(-13) mbar l/(smm(2)). The chamber is produced from AlSi10Mg by laser powder bed fusion. Detailed surface analysis reveals that an oxidised, Mg-rich surface layer forms on the additively manufactured material and plays a key role in enabling vacuum compatibility. Our results not only enable lightweight, compact versions of existing systems, but also facilitate rapid prototyping and unlock hitherto inaccessible options in experimental science by removing the constraints that traditional manufacturing considerations impose on component design. This is particularly relevant to the burgeoning field of portable quantum sensors - a point that we illustrate by using the chamber to create a magneto-optical trap for cold Rb-85 atoms - and will impact significantly on all application areas of high and ultra-high vacuum.