Polarization-induced resistive switching behaviors in complex oxide heterostructures
Polarization-induced resistive switching behaviors in complex oxide heterostructures
复制标题
复杂氧化物异质结构中极化引起的电阻开关行为
DOI：
10.1063/1.4931726
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发表时间：
2015
影响因子：
4
通讯作者：
Xue Desheng
中科院分区：
文献类型：
--
作者：
Wu Lei;Zhang Chao;Dong Chunhui;Jia Chenglong;Jiang Changjun;Xue Desheng
通过在铁电 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (011) 单晶衬底上生长 La0.67Ca0.33MnO3 薄膜来制备复杂氧化物异质结构。同时实现由电场引起的非易失性或脉冲电阻开关行为。进一步分析表明，不同的电阻开关行为是压电应变和极化电流效应共同控制的结果。随着面内读取电流从 0.1mA 减小到 0.001mA，极化电流效应逐渐开始发挥比压电应变效应更重要的作用。因此，非易失性电阻开关行为被转换为脉冲电阻开关行为。该结果进一步增强了复合氧化物在多功能存储器件中的应用。
Complex oxide heterostructures are fabricated by growing La0.67Ca0.33MnO3 films on ferroelectric 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (011) single-crystal substrates. The nonvolatile or pulsed resistive switching behaviors induced by an electric field are achieved simultaneously. Further analyses indicate that the different resistive switching behaviors are resulted from co-control of piezostrain and polarization current effects. With decreasing in-plane read current from 0.1 mA to 0.001 mA, the polarization current effect gradually begins to play a more important role than the piezostrain effect. Consequently, the nonvolatile resistive switching behavior is converted to pulse resistive switching behavior. The results further enhance the application of complex oxides in multifunctional memory devices.